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| MJW3281A (NPN) MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features http://onsemi.com * Designed for 100 W Audio Frequency * Gain Complementary: * * * * Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area - 1 A/100 V @ 1 Second High fT - 30 MHz Typical Pb-Free Packages are Available* 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 1 2 3 TO-247 CASE 340L MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current Collector Current - Continuous - Peak (Note 1) Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 230 230 5.0 230 15 25 1.5 200 1.43 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc W W/C C 1 BASE 3 EMITTER 2 COLLECTOR xxxx A Y WW G = 3281 or 1302 = Assembly Location = Year = Work Week = Pb-Free Package MJWxxxxA AYWWG MARKING DIAGRAM Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA Max 0.625 40 Unit C/W C/W ORDERING INFORMATION Device MJW3281A MJW3281AG MJW1302A MJW1302AG Package TO-247 TO-247 (Pb-Free) TO-247 TO-247 (Pb-Free) Shipping 30 Units/Rail 30 Units/Rail 30 Units/Rail 30 Units/Rail Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 January, 2006 - Rev. 3 Publication Order Number: MJW3281A/D MJW3281A (NPN) MJW1302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB = 230 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 100 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) fT - Cob - - 600 30 - pF MHz hFE 50 50 50 50 50 45 12 VCE(sat) - VBE(on) - - 2 0.4 2 Vdc 125 - - - 115 - 35 200 200 200 200 200 - - Vdc - IS/b 4 1 - - - - Adc VCEO(sus) 230 ICBO - IEBO - - 5 - 50 mAdc - - mAdc Vdc Symbol Min Typ Max Unit http://onsemi.com 2 MJW3281A (NPN) MJW1302A (PNP) TYPICAL CHARACTERISTICS PNP MJW1302A f T, CURRENT BANDWIDTH PRODUCT (MHz) VCE = 10 V 40 30 20 10 0 TJ = 25C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 5V f T, CURRENT BANDWIDTH PRODUCT (MHz) 50 60 50 40 30 20 10 0 0.1 TJ = 25C ftest = 1 MHz 1.0 IC, COLLECTOR CURRENT (AMPS) 10 NPN MJW3281A VCE = 10 V 5V Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product PNP MJW1302A 1000 1000 NPN MJW3281A hFE , DC CURRENT GAIN h FE , DC CURRENT GAIN 25C TJ = 100C -25 C TJ = 100C 100 -25 C 25C 100 10 VCE = 20 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VCE = 20 V 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJW1302A 1000 1000 NPN MJW3281A h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 25C TJ = 100C 100 -25 C TJ = 100C 100 25C -25 C 10 VCE = 5 V 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VCE = 5 V 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V http://onsemi.com 3 Figure 6. DC Current Gain, VCE = 5 V MJW3281A (NPN) MJW1302A (PNP) TYPICAL CHARACTERISTICS PNP MJW1302A 45 40 IC, COLLECTOR CURRENT (A) 35 30 25 20 15 10 5.0 0 0 TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 1.5 A IB = 2 A IC , COLLECTOR CURRENT (A) 45 40 35 30 25 20 15 10 5.0 0 0 TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 NPN MJW3281A 1.5 A IB = 2 A 1A 0.5 A 1A 0.5 A Figure 7. Typical Output Characteristics PNP MJW1302A 3.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0.1 TJ = 25C IC/IB = 10 VBE(sat) 2.5 2.0 1.5 Figure 8. Typical Output Characteristics NPN MJW3281A TJ = 25C IC/IB = 10 VBE(sat) 1.0 0.5 0 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJW1302A VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) TJ = 25C VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 10 TJ = 25C NPN MJW3281A VCE = 5 V (DASHED) VCE = 20 V (SOLID) VCE = 5 V (DASHED) VCE = 20 V (SOLID) 1.0 1.0 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage http://onsemi.com 4 MJW3281A (NPN) MJW1302A (PNP) PNP MJW1302A 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 NPN MJW3281A 10 1 Sec 1.0 10 mSec 100 mSec 10 1 Sec 1.0 10 mSec 100 mSec 0.1 1.0 10 100 VCE, COLLECTOR EMITTER (VOLTS) 1000 0.1 1.0 10 100 VCE, COLLECTOR EMITTER (VOLTS) 1000 Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 13 and 14 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TYPICAL CHARACTERISTICS PNP MJW1302A 10000 Cib 10000 Cib NPN MJW3281A C, CAPACITANCE (pF) 1000 Cob C, CAPACITANCE (pF) 1000 Cob TJ = 25C ftest = 1 MHz 100 0.1 1.0 10 100 100 0.1 TJ = 25C ftest = 1 MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW1302A Typical Capacitance Figure 16. MJW3281A Typical Capacitance http://onsemi.com 5 MJW3281A (NPN) MJW1302A (PNP) PACKAGE DIMENSIONS TO-247 CASE 340L-02 ISSUE D -T- C -B- U N A 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 2.20 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 20.06 20.83 5.40 6.20 4.32 5.49 --- 4.50 3.55 3.65 6.15 BSC 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.087 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.790 0.820 0.212 0.244 0.170 0.216 --- 0.177 0.140 0.144 0.242 BSC 0.113 0.123 E L 4 DIM A B C D E F G H J K L N P Q U W -Q- P -Y- 0.63 (0.025) M TB M K W F 2 PL G D 3 PL 0.25 (0.010) M J H YQ S PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJW3281A/D |
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